BFG505/X,235 NXP Semiconductors, BFG505/X,235 Datasheet - Page 6

• Manufacturer Part Number: BFG505/X,235
• Description: TRANS RF NPN 9GHZ SOT4
• Manufacturer: NXP Semiconductors

Specifications of BFG505/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
G
MSG = maximum stable gain;
G
V
G
MSG = maximum stable gain;
G
CE
CE
UM
max
UM
max
gain
(dB)
gain
(dB)
= 6 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
= 6 V; I
25
20
15
10
= maximum unilateral power gain;
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
= maximum available gain.
5
0
0
10
0
Fig.9 Gain as a function of frequency.
C
G UM
MSG
= 5 mA.
MSG
G UM
10
4
2
G max
10
8
3
I C (mA)
f (MHz)
G max
MRA643
MRA645
Rev. 04 - 22 November 2007
12
10
4
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain;
G
V
CE
CE
UM
max
F min
Fig.10 Minimum noise figure and associated
(dB)
gain
(dB)
= 6 V; I
= 6 V.
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
0
5
4
3
2
1
0
10
10
Fig.8 Gain as a function of frequency.
1
C
available gain as functions of collector
current.
G UM
MSG
= 1.25 mA.
2000 MHz
1000 MHz
900 MHz
500 MHz
10
2
BFG505; BFG505/X
1
G ass
F min
10
I C (mA)
3
Product specification
f = 900 MHz
f (MHz)
1000 MHz
2000 MHz
MRA650
MRA644
6 of 13
10
10
4
20
15
10
0
G ass
5
(dB)
5