BFG505/X,235 NXP Semiconductors, BFG505/X,235 Datasheet - Page 13

• Manufacturer Part Number: BFG505/X,235
• Description: TRANS RF NPN 9GHZ SOT4
• Manufacturer: NXP Semiconductors

Specifications of BFG505/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
Revision history
Revision history
Document ID
BFG505_X_N_4
Modifications:
BFG505_X_3
(9397 750 04348)
BFG505XR_CNV_2
BFG505XR_1
Release date
20071122
19981002
19950901
19921101
•
Marking table on page 2; changed code
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
-
-
-
-
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Supersedes
BFG505_X_3
BFG505XR_CNV_2
BFG505XR_1
-
Document identifier: BFG505_X_N_4
Date of release: 22 November 2007
All rights reserved.