BFU710F,115 NXP Semiconductors, BFU710F,115 Datasheet - Page 36
BFU710F,115
Manufacturer Part Number
BFU710F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU710F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
43GHz
Noise Figure (db Typ @ F)
0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Power - Max
136mW
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 2V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFU710F,115
Manufacturer:
PANASONIC
Quantity:
10 001
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1.6.7 Medical Imaging
Application diagram
Recommended products
38
Function
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
driver
driver
driver
final
final
final
final
NXP Semiconductors RF Manual 14
Type
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
Gradient coils
Magnet
RF coils
ELECTRONICS
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
(MHz)
f
RF
range
th
edition
1200
100
300
400
100
120
20
P
W
L
RF amplifier
X GRADIENT
Y GRADIENT
Z GRADIENT
AMPLIFIER
AMPLIFIER
AMPLIFIER
ADC
27.5
27.2
26.5
dB
G
21
21
24
18
p
GENERATOR
WAVEFORM
COMPUTER
DISPLAY
IMAGE
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Very consistent device performance
brb434
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