BFU710F,115 NXP Semiconductors, BFU710F,115 Datasheet - Page 3

• Manufacturer Part Number: BFU710F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU710F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 43GHz
• Noise Figure (db Typ @ F): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 2V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
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and I’m convinced that you’ll find the 14
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Business Line High Performance RF
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NXP Semiconductors RF Manual 14
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