BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet - Page 7
![TRANS NPN 10V 20MA 8GHZ SOT323](/photos/16/4/160422/sot323_sml.jpg)
BFQ67W,135
Manufacturer Part Number
BFQ67W,135
Description
TRANS NPN 10V 20MA 8GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ67W135.pdf
(12 pages)
Specifications of BFQ67W,135
Package / Case
SC-70, SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
50 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
I
C
C
= 15 mA; V
= 15 mA; V
CE
CE
= 8 V; Z
= 8 V.
o
= 50 .
Fig.13 Common emitter forward transmission coefficient (S
180°
180°
Fig.12 Common emitter input reflection coefficient (S
50
0
−135°
−135°
135°
135°
40
0.2
0.2
40 MHz
0.2
30
0.5
0.5
20
0.5
3 GHz
10
−90°
−90°
90°
90°
7
1
1
1
3 GHz
2
2
2
40 MHz
5
MRC048
−45°
−45°
45°
45°
MRC047
5
5
11
).
0°
0°
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFQ67W