BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet - Page 4
![TRANS NPN 10V 20MA 8GHZ SOT323](/photos/16/4/160422/sot323_sml.jpg)
BFQ67W,135
Manufacturer Part Number
BFQ67W,135
Description
TRANS NPN 10V 20MA 8GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ67W135.pdf
(12 pages)
Specifications of BFQ67W,135
Package / Case
SC-70, SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
50 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
I
Fig.4
C
(mW)
P
C re
(pF)
= 0; f = 1 MHz.
tot
400
300
200
100
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
50
4
100
8
150
V
CB
T
MRC045- 1
s
MRC039
(
(V)
o
C)
200
12
4
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.3
V
Fig.5
h
CE
CE
T f
FE
120
= 5 V; T
= 8 V; f = 2 GHz; T
80
40
10
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
amb
20
= 25 C.
20
40
Product specification
30
I
C
I
BFQ67W
(mA)
C
MBB301
(mA)
MBB303
60
40