BFG93A/X,215 NXP Semiconductors, BFG93A/X,215 Datasheet - Page 6

• Manufacturer Part Number: BFG93A/X,215
• Description: TRANS NPN 12V 35MA 6GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG93A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6196-2; BFG93A/X,215

NXP Semiconductors
handbook, full pagewidth
handbook, halfpage
NPN 6 GHz wideband transistors
V
Fig.10 Minimum noise figure as a function of
Z
Maximum stable gain = 22.2 dB.
o
CE
(dB)
= 50 .
F
= 8 V.
4
3
2
0
1
1
collector current; typical values.
+ j
– j
10
Fig.12 Common emitter noise figure circles; typical values.
0.2
0.2
22.2 dB
MSG
I
C
(mA)
f = 2 GHz
1 GHz
500 MHz
0.5
0.5
0.2
stability
circle
MCD094
Rev. 05 - 26 November 2007
10
2
0.5
F
min
1
1
1
2 dB
3 dB
4 dB
OPT
*
= 1.4 dB
handbook, halfpage
V
Fig.11 Minimum noise figure as a function of
CE
(dB)
2
F
= 8 V.
4
3
2
0
1
10
10 mA
I
2
frequency; typical values.
5 mA
C
= 30 mA
2
5
2
10
MCD096
5
5
BFG93A; BFG93A/X
10
10
10
3
Product specification
f (MHz)
MCD095
6 of 13
10
4