BFG93A/X,215 NXP Semiconductors, BFG93A/X,215 Datasheet - Page 3

• Manufacturer Part Number: BFG93A/X,215
• Description: TRANS NPN 12V 35MA 6GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG93A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6196-2; BFG93A/X,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
V
V
V
I
P
T
T
R
I
h
C
C
C
f
G
F
SYMBOL
SYMBOL
SYMBOL
C
j
CBO
T
FE
stg
j
CBO
CEO
EBO
tot
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 6 GHz wideband transistors
UM
s
s
UM
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction operating temperature
thermal resistance from junction to soldering point
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
noise figure
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
I
I
I
I
I
I
I
f = 1 GHz
I
f = 2 GHz
T
T
E
C
E
C
C
C
C
C
s
s
amb
s
amb
Rev. 05 - 26 November 2007
= 0; V
= i
= 30 mA; V
= i
= i
= 30 mA; V
= 30 mA; V
= 30 mA; V
=
=
85 C; note 1
e
c
c
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
= 0; V
= 0; V
= 0; V
CB
; I
; I
C
C
= 5 V
CONDITIONS
CONDITIONS
= 5 mA; V
= 5 mA; V
CB
EB
CB
CE
CE
CE
CE
12
= 5 V; f = 1 MHz
= 5 V; f = 1 MHz
= 5 V; f = 1 MHz
is zero and
= 5 V
= 5 V; f = 500 MHz
= 8 V; T
= 8 V; T
note 1
CONDITIONS
CE
CE
amb
amb
= 8 V;
= 8 V;
G
= 25 C;
= 25 C;
UM
=
10
BFG93A; BFG93A/X
log
40
4.5
MIN.
65
MIN.
-------------------------------------------------------------- dB.
VALUE
1
290
–
S
90
0.9
1.9
0.6
6
16
10
1.7
2.3
TYP.
11
15
12
2
35
300
+150
175
Product specification
S
2
MAX.
21
1
2
50
MAX.
–
S
22
3 of 13
UNIT
K/W
V
V
V
mA
mW
C
C
2
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT