BFG92A/X,215 NXP Semiconductors, BFG92A/X,215 Datasheet - Page 7

• Manufacturer Part Number: BFG92A/X,215
• Description: TRANS NPN 15V 25MA 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG92A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6195-2; BFG92A/X,215

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
Z
Maximum stable gain = 19.9 dB.
Z
o
o
= 50 .
= 50 .
stability circle
+ j
+ j
– j
– j
Fig.13 Common emitter noise figure circles; typical values.
Fig.14 Common emitter noise figure circles; typical values.
0
0
0.2
0.2
0.2
0.2
19.9 dB
MSG
G max
12.5 dB
12 dB
*
0.5
0.5
0.5
0.2
0.5
0.2
10 dB
F
Rev. 06 - 12 March 2008
min
0.5
0.5
= 3 dB
OPT
*
1
1
1
1
1
1
F
min
3.5 dB
4 dB
5 dB
2.5 dB
4 dB
OPT
3 dB
= 2.1 dB
*
2
2
2
5
2
2
5
2
10
10
MCD084
MCD085
5
5
5
5
10
10
10
10
Product specification
BFG92A/X
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