BFG92A/X,215 NXP Semiconductors, BFG92A/X,215 Datasheet - Page 4

• Manufacturer Part Number: BFG92A/X,215
• Description: TRANS NPN 15V 25MA 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG92A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6195-2; BFG92A/X,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
Fig.4
C re
(pF)
(mW)
C
P tot
= i
800
600
400
200
0.6
0.4
0.2
c
0
0
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve.
50
6
100
12
150
18
V
T
CB
MBB963 - 1
s
(
MCD075
o
(V)
C)
200
24
Rev. 06 - 12 March 2008
handbook, halfpage
handbook, halfpage
V
Fig.3
V
(GHz)
CE
CE
h FE
f T
Fig.5
120
= 10 V.
= 10 V; T
80
40
6
4
2
0
0
0
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
amb
= 25 C; f = 500 MHz.
10
10
20
20
Product specification
BFG92A/X
I
I
C
C
(mA)
(mA)
MBB275
MCD074
4 of 13
4 of 13
30
30