BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 6

• Manufacturer Part Number: BFR540,235
• Description: TRANS NPN 15V 120MA 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
9397 750 13398
Product data sheet
Fig 7. Gain as a function of frequency; I
Fig 9. Minimum noise figure and associated available
F
gain
(dB)
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
V
V
gain as a function of collector current.
10
1
CE
CE
= 8 V; I
= 8 V.
MSG
2000
1000
900
500
G
C
UM
= 10 mA.
10
F
2
min
10
10
I
3
C
G
G
(mA)
max
ass
f (MHz)
f (MHz)
C
1000
900
2000
mra692
mra698
= 10 mA.
Rev. 05 — 1 September 2004
10
10
4
2
20
15
10
5
0
5
G
(dB)
ass
Fig 8. Gain as a function of frequency; I
Fig 10. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
V
V
gain as a function of frequency.
10
10
CE
CE
2
= 8 V; I
= 8 V.
I
C
(mA)
F
MSG
min
C
= 40 mA.
G
10
10
UM
10
40
NPN 9 GHz wideband transistor
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
40
10
3
G
ass
10
3
f (MHz)
G
max
f (MHz)
BFR540
C
mra693
mra699
= 40 mA.
10
10
4
4
15
10
20
5
0
5
G
(dB)
ass
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