BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 4
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BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
9397 750 13398
Product data sheet
Fig 1. Power derating curve.
(mW)
P
tot
600
400
200
0
0
50
Table 7:
T
[1]
[2]
[3]
Symbol Parameter
NF
P
ITO
V
j
L(1dB)
O
= 25 C unless otherwise specified.
100
G
I
Measured at f
d
f
Measured at f
C
r
im
UM
G
= 805.25 MHz.
= 40 mA; V
= 60 dB (DIN 45004B); V
UM
is the maximum unilateral power gain, assuming s
noise figure
output power at
1 dB gain
compression
third order
intercept point
output voltage
Characteristics
=
150
10
CE
(2p q)
(p+q r)
T
log
sp
= 8 V; R
mea398
( C)
= 898 MHz and f
= 793.25 MHz.
----------------------------------------------------- dB.
Rev. 05 — 1 September 2004
1
200
–
L
= 50 ; T
s
…continued
Conditions
T
I
R
f = 900 MHz
I
Z
T
11
C
C
s
amb
L
amb
L
p
I
I
I
= 40 mA; V
= 40 mA; V
=
s
2
C
C
C
= Z
= 50 ; T
= V
21
= 10 mA; f = 900 MHz
= 40 mA; f = 900 MHz
= 10 mA; f = 2 GHz
= 25 C
= 25 C
1
opt
S
O
2
amb
(2q p)
; V
–
= 75 ;
; V
Fig 2. DC current gain as a function of collector
q
s
= 25 C; f = 900 MHz; f
CE
22
= V
= 904 MHz.
amb
h
CE
CE
2
FE
= 8 V;
O
250
200
150
100
50
= 25 C;
= 8 V;
= 8 V;
0
10
V
current.
6 dB; f
CE
2
= 8 V.
p
12
= 795.25 MHz; V
is zero and
10
1
[2]
[3]
p
NPN 9 GHz wideband transistor
= 900 MHz; f
Min
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
R
= V
q
Typ
1.3
1.9
2.1
21
34
550
O
= 902 MHz.
10
6 dB; f
I
BFR540
C
(mA)
mra687
q
Max
1.8
2.4
-
-
-
-
= 803.25 MHz;
10
2
4 of 13
Unit
dB
dB
dB
dBm
dBm
mV