BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 8
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BLF7G27LS-150P,112
Manufacturer Part Number
BLF7G27LS-150P,112
Description
TRANS LDMOS SOT539B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-150P118.pdf
(14 pages)
Specifications of BLF7G27LS-150P,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
16.5dB
Current Rating
37A
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
*
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
37 A
Maximum Operating Temperature
+ 225 C
Forward Transconductance Gfs (max / Min)
0.86 S
Resistance Drain-source Rds (on)
0.14 Ohms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−20
−40
−60
5M
0
8
6
4
2
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(2)
(1)
(3)
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
(2)
(1)
(3)
80
80
BLF7G27L-150P; BLF7G27LS-150P
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aam997
001aam999
(W)
(W)
Rev. 1 — 12 November 2010
120
120
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
10M
−10
−20
−30
−40
−50
−60
−70
300
200
100
0
0
0
0
V
function of load power; typical values
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
Power LDMOS transistor
(3)
(1)
(2)
80
80
(2)
(1)
(3)
© NXP B.V. 2010. All rights reserved.
P
P
L
L
001aam998
001aan000
(W)
(W)
120
120
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