BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 2

• Manufacturer Part Number: BLF7G27LS-150P,112
• Description: TRANS LDMOS SOT539B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27LS-150P,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 37 A
• Maximum Operating Temperature: + 225 C
• Forward Transconductance Gfs (max / Min): 0.86 S
• Resistance Drain-source Rds (on): 0.14 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-150P_7G27LS-150P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-150P (SOT539A)
1
2
3
4
5
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
Type number
BLF7G27L-150P
BLF7G27LS-150P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1 — 12 November 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
37
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
°C
°C