BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 2
![TRANS LDMOS SOT539B](/photos/39/60/396078/inhouse_lf7g27ls150p112_t_sml.jpg)
BLF7G27LS-150P,112
Manufacturer Part Number
BLF7G27LS-150P,112
Description
TRANS LDMOS SOT539B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-150P118.pdf
(14 pages)
Specifications of BLF7G27LS-150P,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
16.5dB
Current Rating
37A
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
*
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
37 A
Maximum Operating Temperature
+ 225 C
Forward Transconductance Gfs (max / Min)
0.86 S
Resistance Drain-source Rds (on)
0.14 Ohms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-150P_7G27LS-150P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-150P (SOT539A)
1
2
3
4
5
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
Type number
BLF7G27L-150P
BLF7G27LS-150P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1 — 12 November 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
37
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
°C
°C