BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G27LS-150P,112
• Description: TRANS LDMOS SOT539B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27LS-150P,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 37 A
• Maximum Operating Temperature: + 225 C
• Forward Transconductance Gfs (max / Min): 0.86 S
• Resistance Drain-source Rds (on): 0.14 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
0
V
Single carrier W-CDMA power gain as a
function of load power; typical values
DS
= 28 V; I
7.4 Single carrier W-CDMA
Dq
40
= 1200 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
(3)
(1)
(2)
80
BLF7G27L-150P; BLF7G27LS-150P
P
All information provided in this document is subject to legal disclaimers.
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Rev. 1 — 12 November 2010
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Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
10
0
0
V
function of load power; typical values
DS
= 28 V; I
Dq
40
= 1200 mA.
Power LDMOS transistor
80
(1)
(3)
(2)
© NXP B.V. 2010. All rights reserved.
P
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