BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 7
![TRANS LDMOS SOT539B](/photos/39/60/396078/inhouse_lf7g27ls150p112_t_sml.jpg)
BLF7G27LS-150P,112
Manufacturer Part Number
BLF7G27LS-150P,112
Description
TRANS LDMOS SOT539B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-150P118.pdf
(14 pages)
Specifications of BLF7G27LS-150P,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
16.5dB
Current Rating
37A
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
*
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
37 A
Maximum Operating Temperature
+ 225 C
Forward Transconductance Gfs (max / Min)
0.86 S
Resistance Drain-source Rds (on)
0.14 Ohms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
0
V
Single carrier W-CDMA power gain as a
function of load power; typical values
DS
= 28 V; I
7.4 Single carrier W-CDMA
Dq
40
= 1200 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
(3)
(1)
(2)
80
BLF7G27L-150P; BLF7G27LS-150P
P
All information provided in this document is subject to legal disclaimers.
L
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(W)
Rev. 1 — 12 November 2010
120
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
10
0
0
V
function of load power; typical values
DS
= 28 V; I
Dq
40
= 1200 mA.
Power LDMOS transistor
80
(1)
(3)
(2)
© NXP B.V. 2010. All rights reserved.
P
L
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