BLF7G24LS-140,112 NXP Semiconductors, BLF7G24LS-140,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G24LS-140,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G24LS-140,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

NXP Semiconductors
BLF7G24L-140_7G24LS-140
Preliminary data sheet
Fig 9.
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
APCR
(dBc)
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
−20
−30
−40
−50
−60
p
19
18
17
16
5M
0
V
Single carrier W-CDMA power gain as a
function of load power; typical values
0
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
7.4 Single carrier W-CDMA
Dq
Dq
40
40
= 1300 mA.
= 1300 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz.
(2)
(1)
(2)
(1)
80
80
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aan531
001aan533
(W)
(W)
BLF7G24L-140; BLF7G24LS-140
120
120
Rev. 2 — 5 April 2011
Fig 10. Single carrier W-CDMA drain efficiency as a
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
APCR
(dBc)
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
D
−30
−40
−50
−60
−70
10M
50
40
30
20
10
0
0
V
function of load power; typical values
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1300 mA.
= 1300 mA.
Power LDMOS transistor
(2)
(1)
(1)
(2)
80
80
© NXP B.V. 2011. All rights reserved.
P
P
L
L
001aan532
001aan534
(W)
(W)
120
120
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