BLF6G22L-40BN,112 NXP Semiconductors, BLF6G22L-40BN,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22L-40BN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22L-40BN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 19dB
• Current Rating: 10A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: CDFM
• Pin Count: 7
• Forward Transconductance (typ): 4.3S
• Drain Source Resistance (max): 250(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 16%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
Fig 5.
(dB)
G
p
20
18
16
14
12
10
0
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 28 V; I
G
D
p
7.4 1-Carrier W-CDMA
5
Dq
= 345 mA; f = 2140 MHz.
10
Fig 7. Peak-to-average power ratio as a function of load power; typical values
15
V
DS
= 28 V; I
20
All information provided in this document is subject to legal disclaimers.
001aam461
P
L
(W)
Dq
PAR
= 345 mA; f = 2140 MHz.
25
Rev. 1 — 30 August 2010
50
40
30
20
10
0
8
7
6
5
4
3
(%)
0
D
5
Fig 6.
ACPR
(dBc)
10
20
30
40
50
60
70
0
V
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
DS
= 28 V; I
15
5
Dq
BLF6G22L-40BN
20
= 345 mA; f = 2140 MHz.
001aam463
P
10
L
(W)
25
Power LDMOS transistor
15
ACPR
ACPR
10M
© NXP B.V. 2010. All rights reserved.
5M
20
001aam462
P
L
(W)
25
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