BLF6G22L-40BN,112 NXP Semiconductors, BLF6G22L-40BN,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22L-40BN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22L-40BN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 19dB
• Current Rating: 10A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: CDFM
• Pin Count: 7
• Forward Transconductance (typ): 4.3S
• Drain Source Resistance (max): 250(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 16%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22L-40BN
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4, 5
6, 7
Type number
BLF6G22L-40BN
Symbol
V
V
V
T
T
Symbol Parameter
R
stg
j
DS
GS
GS(sense)
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
thermal resistance from junction to case T
Pinning
Ordering information
Limiting values
Thermal characteristics
drain
gate
source
sense drain
sense gate
Description
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 1 — 30 August 2010
flanged ceramic package; 2 mounting holes; 6 leads
[1]
Conditions
case
Conditions
Simplified outline
= 80 °C; P
4
6
BLF6G22L-40BN
1
2
L
Power LDMOS transistor
= 12.5 W (CW)
5
7
3
Min
-
−0.5
−0.5
−65
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
200
Max
65
+13
+9
+150
1
3
Version
SOT1112A
4, 5
Typ Unit
1.7
sym126
Unit
V
V
V
°C
°C
2 of 13
6, 7
K/W