BLF6G22L-40BN,112 NXP Semiconductors, BLF6G22L-40BN,112 Datasheet - Page 13

• Manufacturer Part Number: BLF6G22L-40BN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22L-40BN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 19dB
• Current Rating: 10A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: CDFM
• Pin Count: 7
• Forward Transconductance (typ): 4.3S
• Drain Source Resistance (max): 250(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 16%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ruggedness in class-AB operation . . . . . . . . . 3
2-Carrier W-CDMA with 5 MHz carrier spacing 4
2-Carrier W-CDMA with 10 MHz carrier spacing 4
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Impedance information . . . . . . . . . . . . . . . . . . . 8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
BLF6G22L-40BN
Power LDMOS transistor
Document identifier: BLF6G22L-40BN
Date of release: 30 August 2010
All rights reserved.