BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet - Page 8

• Manufacturer Part Number: BLF6G15L-40BRN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-40BRN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 22dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 11 A
• Maximum Operating Temperature: + 200 C
• Forward Transconductance Gfs (max / Min): 4.3 S
• Resistance Drain-source Rds (on): 0.25 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G15L-40BRN
Product data sheet
Document ID
BLF6G15L-40BRN v.2
Modifications:
BLF6G15L-40BRN v.1
Revision history
Table 11.
Acronym
3GPP
CCDF
LDMOS
PAR
DPCH
RF
VSWR
W-CDMA
20101112
20100914
Release date
•
Data sheet status changed from Preliminary sheet to Product data
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
Dedicated Physical Channel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 2 — 12 November 2010
Data sheet status
Product data sheet
Preliminary data sheet
Change notice
-
-
BLF6G15L-40BRN
Power LDMOS transistor
Supersedes
BLF6G15L-40BRN v.1
-
© NXP B.V. 2010. All rights reserved.
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