BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G15L-40BRN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-40BRN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 22dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 11 A
• Maximum Operating Temperature: + 200 C
• Forward Transconductance Gfs (max / Min): 4.3 S
• Resistance Drain-source Rds (on): 0.25 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
8. Test information
BLF6G15L-40BRN
Product data sheet
Fig 5.
C3
Printed-Circuit Board (PCB): Rogers RO4350; ε
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided.
See
Component layout
Table 10
C1
C8
for list of components.
R3
Table 10.
See
[1]
[2]
C2
C9
Component
C1, C8
C2, C6, C9
C3, C4
C5, C11
C7
C10
C12
C13
C14, C15
C16
R1, R2
R3
R4
R4
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
Figure 5
List of components
for component layout.
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
chip resistor
chip resistor
chip resistor
Rev. 2 — 12 November 2010
R1
R2
r
C14
C16
= 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 μm.
C13
BLF6G15L-40BRN
Value
68 pF
160 pF
24 pF
47 pF
470 μF; 63 V
15 pF
43 pF
20 pF
1 μF
100 pF
15 Ω
820 Ω
1.8 kΩ
C10
C6
C12
Power LDMOS transistor
C5
C11
[1]
[1]
[2]
[1]
[1]
[1]
[1]
© NXP B.V. 2010. All rights reserved.
+
Remarks
Murata 0603
Philips 0603
Philips 0603
Philips 0603
C7
C4
014aab103
C15
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