IXXK100N60C3H1 IXYS, IXXK100N60C3H1 Datasheet - Page 7

• Manufacturer Part Number: IXXK100N60C3H1
• Description: IGBT 600V 170A 695W TO264
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXK100N60C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 70A
• Current - Collector (ic) (max): 170A
• Power - Max: 695W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA Variation
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 695 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 170
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 75
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.4
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 65
• Rthjc, Max, Diode (k/w): 0.30
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 26 Maximum transient thermal impedance junction to case (for diode)
Fig. 25. Dynamic Parameters Q
1.00
0.10
0.01
Fig. 22. Forward Current I
27.
0.0001
Versus T
VJ
0.001
F
Versus V
r
, I
RM
F
Fig. 23. Reverse Recovery Charge Q
Versus -di
Fig. 26. Recovery Time t
0.01
Pulse Width [ms]
-di
F
/dt
F
/dt
Seconds
rr
Versus
0.1
r
Fig. 24. Peak Reverse Current I
1
Versus -di
IXXK100N60C3H1
IXXX100N60C3H1
F
/dt
IXYS REF: IXX_100N60C3(7D)9-30-10-A
10
RM