IXXK100N60C3H1 IXYS, IXXK100N60C3H1 Datasheet - Page 2

• Manufacturer Part Number: IXXK100N60C3H1
• Description: IGBT 600V 170A 695W TO264
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXK100N60C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 70A
• Current - Collector (ic) (max): 170A
• Power - Max: 695W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA Variation
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 695 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 170
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 75
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.4
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 65
• Rthjc, Max, Diode (k/w): 0.30
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
-di
F
I
C
C
C
F
C
CE
= 60A, V
CE
CE
= 70A, V
= 60A, V
= 70A, V
= 70A, V
= 60A, V
F
PRELIMINARY TECHNICAL INFORMATION
/dt = 200A/μs, V
= 25V, V
= 360V, R
= 360V, R
GE
GE
GE
GE
GE
CE
GE
= 0V, Note 1
= 0V,
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 2
= 2
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
R
= 300V
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
T
T
J
J
= 150°C
CES
= 100°C
5,049,961
5,063,307
5,187,117
Min.
Min.
22
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4810
2.00
0.95
3.00
1.40
0.15
Typ.
Typ.
455
150
105
115
140
1.6
1.4
40
8.3
80
34
60
30
70
90
75
30
65
CE
(clamp), T
Max.
Max.
0.30 °C/W
0.18 °C/W
1.40 mJ
2.0
1.8
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
Terminals: 1 - Gate
PLUS247
TO-264 Outline
Terminals:
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
2 - Collector
3 - Emitter
IXXK100N60C3H1
IXXX100N60C3H1
2,4 = Collector
TM
3 = Emitter
20.80
15.75
19.81
1 = Gate
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Outline
Millimeter
5.45 BSC
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190