AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet - Page 6

• Manufacturer Part Number: AUIRF2907Z
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907Z

• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0001
6
180
160
140
120
100
0.001
0.01
80
60
40
20
0.1
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.02
T C , Case Temperature (°C)
0.10
0.01
0.05
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
1
R
I D = 90A
V GS = 10V
1
2
R
2
T J , Junction Temperature (°C)
2
0.01
R
vs. Temperature
2
C
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
0.279
0.221
0.1
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0.000457
0.003019
i (sec)
1