AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet - Page 6
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AUIRF2907Z
Manufacturer Part Number
AUIRF2907Z
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF2907Z.pdf
(12 pages)
Specifications of AUIRF2907Z
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF2907Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZL
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS-7P
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS7PTL
Manufacturer:
IR
Quantity:
12 500
0.0001
6
180
160
140
120
100
0.001
0.01
80
60
40
20
0.1
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.02
T C , Case Temperature (°C)
0.10
0.01
0.05
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
1
R
I D = 90A
V GS = 10V
1
2
R
2
T J , Junction Temperature (°C)
2
0.01
R
vs. Temperature
2
C
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
0.279
0.221
0.1
www.irf.com
0.000457
0.003019
i (sec)
1