AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet - Page 4

• Manufacturer Part Number: AUIRF2907Z
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907Z

• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
4
1000
1000
100
Fig 3. Typical Transfer Characteristics
0.1
100
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
2
TOP
BOTTOM
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
1
4.5V
V DS = 25V
6
Tj = 25°C
60µs PULSE WIDTH
60µs PULSE WIDTH
10
8
10
100
1000
200
150
100
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
50
10
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
25
I D ,Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
50
1
T J = 25°C
75
V DS = 10V
380µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
4.5V
T J = 175°C
www.irf.com
100
10
125
150
100