AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet - Page 5

• Manufacturer Part Number: AUIRF2907Z
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907Z

• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100000
10000
1000
100
1000
100
10
Fig 5. Typical Capacitance vs.
1
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 175°C
V SD , Source-to-Drain Voltage (V)
C oss
C rss
C iss
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
10000
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 90A
Limited by package
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
50
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 60V
V DS = 38V
V DS = 15V
1msec
10msec
100
10
DC
100µsec
150
5
100
200