AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet - Page 5
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AUIRF2907Z
Manufacturer Part Number
AUIRF2907Z
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF2907Z.pdf
(12 pages)
Specifications of AUIRF2907Z
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF2907Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZL
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS-7P
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF2907ZS7PTL
Manufacturer:
IR
Quantity:
12 500
nce
www.irf.com
100000
10000
1000
100
1000
100
10
Fig 5. Typical Capacitance vs.
1
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 175°C
V SD , Source-to-Drain Voltage (V)
C oss
C rss
C iss
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
10000
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 90A
Limited by package
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
50
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 60V
V DS = 38V
V DS = 15V
1msec
10msec
100
10
DC
100µsec
150
5
100
200