AUIRFS4610 International Rectifier, AUIRFS4610 Datasheet - Page 7

• Manufacturer Part Number: AUIRFS4610
• Description: MOSFET N-CH 100V 73A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4610

• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 190 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 90 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16. Threshold Voltage Vs. Temperature
16
12
8
4
0
-75 -50 -25
100 200 300 400 500 600 700 800 900 1000
T J , Temperature ( °C )
0
di f / dt - (A / µs)
25
50
75
I F = 44A
V R = 85V
T J = 125°C
T J = 25°C
300
200
100
100 125 150 175
I D = 1.0A
I D = 1.0mA
I D = 250µA
ID = 100µA
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
I F = 44A
V R = 85V
T J = 125°C
T J = 25°C
300
200
100
16
12
8
4
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
di f / dt - (A / µs)
I F = 29A
V R = 85V
T J = 125°C
T J = 25°C
I F = 29A
V R = 85V
T J = 125°C
T J = 25°C
f
f
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