AUIRFS4610 International Rectifier, AUIRFS4610 Datasheet - Page 6

• Manufacturer Part Number: AUIRFS4610
• Description: MOSFET N-CH 100V 73A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4610

• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 190 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 90 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 15. Maximum Avalanche Energy vs. Temperature
400
300
200
100
0
25
0.0001
0.001
100
0.01
0.1
10
0.1
Starting T J , Junction Temperature (°C)
1
1.0E-06
1
1E-006
50
Duty Cycle = Single Pulse
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
TOP
BOTTOM 1% Duty Cycle
I D = 44A
75
0.20
0.10
0.05
0.02
0.01
100
SINGLE PULSE
( THERMAL RESPONSE )
Single Pulse
1.0E-05
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
0.05
0.10
0.01
j = 25°C and
175
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither T
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
is exceeded.
av
av =
thJC
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
J
J
1
Ci= i Ri
= Average power dissipation per single avalanche pulse.
av
1
Ci
) = Transient thermal resistance, see Figures 13)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
jmax
i Ri
0.001
R
1
R
. This is validated for every part type.
1
P
2
D (ave)
R
2
2
R
2
= 1/2 ( 1.3·BV·I
I
E
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
av
AS (AR)
= 2DT/ [1.3·BV·Z
av
1.0E-02
Ri (°C/W)
·f
= P
0.4367
0.3337
0.01
D (ave)
av
) = DT/ Z
·t
th
av
0.001016
0.009383
]
i (sec)
thJC
jmax
1.0E-01
(assumed as
www.irf.com
0.1
jmax
nor I
av (max)