AUIRFS4610 International Rectifier, AUIRFS4610 Datasheet - Page 2

• Manufacturer Part Number: AUIRFS4610
• Description: MOSFET N-CH 100V 73A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4610

• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 190 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 90 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Diode Characteristics
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
gs
gd
rr
above this value.
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width
temperature.
I
2
(BR)DSS
R
SD
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25 , I
44A, di/dt
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
400µs; duty cycle
= 44A, V
, starting T
660A/µs, V
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.39mH
DD
™
V
Parameter
Parameter
2%.
(BR)DSS
, T
J
J
= 25°C (unless otherwise specified)
175°C.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
––– 0.085 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
73
…
†
‡
ˆ
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
oss
oss
3550
–––
–––
–––
–––
–––
–––
–––
260
150
330
380
–––
–––
–––
2.1
1.5
11
90
20
36
18
87
53
70
35
42
44
65
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
-200
–––
–––
–––
250
200
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
290
–––
4.0
1.3
14
20
73
53
63
66
98
DS
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
m
µA
nA
nC
pF
nC
ns
ns
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
f = 1MHz, open drain
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
J
J
J
J
J
J
G
= 44A
= 44A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 5.6
= 0V, I
= 10V, I
= V
= 50V, I
= 100V, V
= 100V, V
= 20V
= -20V
= 80V
= 10V
= 65V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
D
f
f
D
S
DS
DS
D
DSS
D
= 250µA
= 44A, V
= 100µA
= 44A
= 44A
GS
GS
= 0V to 80V
= 0V to 80V
DSS
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
V
I
di/dt = 100A/µs
.
F
R
= 44A
f
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
h
g
™
, See Fig.11
www.irf.com
f
G
f
D
S