AUIRLR3705ZTRR International Rectifier, AUIRLR3705ZTRR Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
AUIRLR3705ZTRR
Manufacturer Part Number
AUIRLR3705ZTRR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRLR3705ZTRL.pdf
(13 pages)
Specifications of AUIRLR3705ZTRR
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
nce
www.irf.com
1000.0
5000
4000
3000
2000
1000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
0.4
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
0.8
T J = 25°C
Ciss
Coss
Crss
1.0
f = 1 MHZ
10
1.2
1.4
V GS = 0V
1.6
1.8
2.0
100
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
12
10
1
8
6
4
2
0
1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 44V
VDS= 28V
VDS= 11V
40
10msec
10
1msec
DC
100µsec
60
80
100
5
100