AUIRLR3705ZTRR International Rectifier, AUIRLR3705ZTRR Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
AUIRLR3705ZTRR
Manufacturer Part Number
AUIRLR3705ZTRR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRLR3705ZTRL.pdf
(13 pages)
Specifications of AUIRLR3705ZTRR
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
R
Repetitive rating; pulse width limited by
Limited by T
Pulse width
C
charging time as C
80% V
(BR)DSS
max. junction temperature. (See fig. 11).
recommended for use above this value.
G
oss
eff.
= 25 , I
eff. is a fixed capacitance that gives the same
/ T
DSS
J
.
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 42A, V
1.0ms; duty cycle
, starting T
Parameter
oss
while V
GS
=10V. Part not
Parameter
Parameter
J
= 25°C, L = 0.12mH
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
55
89
J
= 25°C (unless otherwise specified)
Limited by T
repetitive avalanche performance.
This value determined from sample failure population,
starting T
V
When mounted on 1" square PCB (FR-4 or G-10 Material) .
refer to application note #AN-994.
For recommended footprint and soldering techniques
0.053
GS
2900
1550
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
420
230
320
500
–––
–––
–––
6.5
4.5
7.5
44
13
22
17
33
70
21
14
=10V.
J
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
360
8.0
3.0
1.3
11
12
20
66
42
42
28
= 25°C, L = 0.12mH, R
Jmax
V/°C
, see Fig.12a, 12b, 15, 16 for typical
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 42A
= 42A
= 25°C, I
= 25°C, I
= 4.2
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 16V
= -16V
= 44V
= 5.0V
= 28V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
G
D
Conditions
Conditions
Conditions
e
e
D
DS
S
F
= 25 , I
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 42A, V
= 42A, V
= 42A
= 42A
= 34A
= 21A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
AS
e
D
e
e
= 1mA
DD
GS
= 42A,
J
= 125°C
= 28V
G
= 0V
f
e
S
D