AUIRLR3705ZTRR International Rectifier, AUIRLR3705ZTRR Datasheet

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AUIRLR3705ZTRR

Manufacturer Part Number
AUIRLR3705ZTRR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRLR3705ZTRR

Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HEXFET
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Features
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
D
D
D
DM
AR
D
GS
AS
AS
AR
J
STG
JC
JA
JA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
(tested)
C
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, VGS @ 10V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
j
Ã
AUTOMOTIVE GRADE
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
i
(Silicon Limited)
(Package Limited)
(Silicon Limited)
G
h
Gate
d
G
AUIRLR3705Z
D
S
HEXFET
AUIRLR3705Z
See Fig.12a, 12b, 15, 16
V
R
I
I
Typ.
D (Silicon Limited)
D (Package Limited)
–––
–––
–––
D-Pak
(BR)DSS
DS(on)
Drain
-55 to + 175
D
Max.
0.88
300
®
360
130
± 16
110
190
89
63
42
max.
Power MOSFET
Max.
1.14
110
40
PD - 97611
Source
8.0m
S
55V
89A
42A
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRLR3705ZTRR Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance j R Junction-to-Case JC R Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE AUIRLR3705Z HEXFET AUIRLR3705Z G Gate Parameter ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

TOP 100 BOTTOM 10 2.8V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25° 175°C 100.0 10 ...

Page 5

0V, C iss = SHORTED C rss = C gd 4000 C oss = 3000 2000 1000 Drain-to-Source ...

Page 6

LIMITED BY PACKAGE 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 120 TOP Single Pulse BOTTOM 1% Duty Cycle 100 42A ...

Page 9

D.U.T + ƒ ‚ „  Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform ...

Page 10

D-Pak Part Marking Information 10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) FEED DIRECTION 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. ...

Page 12

... Ordering Information Base part Package Type number AUIRLR3705Z Dpak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRLR3705Z AUIRLR3705ZTR AUIRLR3705ZTRL AUIRLR3705ZTRR www.irf.com ...

Page 13

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ...

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