AUIRF6215 International Rectifier, AUIRF6215 Datasheet - Page 8

• Manufacturer Part Number: AUIRF6215
• Description: MOSFET P-CH 150V 13A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF6215

• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 0.29ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 110W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 290 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 11 W
• Mounting Style: Through Hole
• Gate Charge Qg: 44 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-