AUIRF6215 International Rectifier, AUIRF6215 Datasheet - Page 5

• Manufacturer Part Number: AUIRF6215
• Description: MOSFET P-CH 150V 13A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF6215

• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 0.29ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 110W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 290 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 11 W
• Mounting Style: Through Hole
• Gate Charge Qg: 44 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
2000
1600
1200
0.1
10
800
400
1
0.2
0
1
-V
T = 175°C
-V
J
SD
DS
0.6
C
C
C
V
C
C
C
, Source-to-Drain Voltage (V)
iss
rss
oss
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
gs
gd
ds
1.0
+ C
+ C
10
T = 25°C
J
gd
gd
f = 1MHz
, C
ds
1.4
SHORTED
V
GS
= 0V
1.8
100
A
A
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I
D
C
J
= -6.6A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
G
20
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
BY R
= -120V
= -75V
= -30V
40
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 13
100
60
10µs
100µs
1ms
10ms
1000
80
A
A