AUIRF6215 International Rectifier, AUIRF6215 Datasheet - Page 6

• Manufacturer Part Number: AUIRF6215
• Description: MOSFET P-CH 150V 13A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF6215

• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 0.29ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 110W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 290 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 11 W
• Mounting Style: Through Hole
• Gate Charge Qg: 44 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
15
12
0.1
10
0.00001
9
6
3
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
V
10%
90%
V
GS
DS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
≤ 1
t
r
J
DM
x Z
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
1
t
f
t
2
+
-
1