IRFB3607GPBF International Rectifier, IRFB3607GPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB3607GPBF
• Description: MOSFET N-CH 75V 80A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3607GPBF

• Input Capacitance (ciss) @ Vds: 3070pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 56 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
15
10
Fig 16. Threshold Voltage vs. Temperature
5
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
0
I F = 46A
V R = 64V
T J = 25°C
T J = 125°C
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
200
T J , Temperature ( °C )
di F /dt (A/µs)
400
600
800
560
480
400
320
240
160
80
0
f
1000
0
I F = 46A
V R = 64V
T J = 25°C
T J = 125°C
200
di F /dt (A/µs)
400
600
800
560
480
400
320
240
160
80
20
15
10
0
5
0
f
0
0
1000
I F = 31A
V R = 64V
T J = 25°C
T J = 125°C
I F = 31A
V R = 64V
T J = 25°C
T J = 125°C
200
200
di F /dt (A/µs)
400
400
di F /dt (A/µs)
600
600
800
800
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f
1000
1000
f