IRFB3607GPBF International Rectifier, IRFB3607GPBF Datasheet

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IRFB3607GPBF

Manufacturer Part Number
IRFB3607GPBF
Description
MOSFET N-CH 75V 80A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB3607GPBF

Input Capacitance (ciss) @ Vds
3070pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 46A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
140 W
Mounting Style
Through Hole
Gate Charge Qg
56 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
l
l
l
l
Benefits
l
l
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
High Efficiency Synchronous Rectification in
SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
Lead-Free
Halogen-Free
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
j
Parameter
Parameter
Ù
f
GS
g
@ 10V
e
G
S
D
Gate
IRFB3607GPbF
G
V
R
I
D
DSS
DS(on)
Typ.
0.50
–––
–––
D
10lb
IRFB3607GPbF
-55 to + 175
TO-220AB
x
typ.
in (1.1N
max.
Max.
80
56
0.96
± 20
Drain
310
140
300
120
HEXFET Power MOSFET
27
46
14
D
G
D
x
m)
S
1.045
Max.
–––
62
7.34m
Source
9.0m
75V
80A
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
08/12/10
1

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IRFB3607GPBF Summary of contents

Page 1

... S Parameter @ 10V Ù g Parameter j IRFB3607GPbF HEXFET Power MOSFET V 75V DSS R typ. 7.34m DS(on) max. 9.0m I 80A TO-220AB IRFB3607GPbF Gate Drain Source Max. ™ 80 ™ 56 310 140 0.96 ± - 175 300 x x 10lb in (1.1N m) 120 46 14 Typ. Max. ––– ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 0.20 0.10 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.00 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 ...

Page 6

100µA 2 250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ...

Page 7

D.U.T + ƒ ‚ -  R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

EXAMPLE: T HIS IS AN IRFB4310GPBF Note: "G" s uffix in part number indicates "Halogen - Free" Note: "P" embly line position indicates "Lead - Free" TO-220AB packages are not recommended for Surface Mount Application. IR WORLD ...

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