IRFB3607GPBF International Rectifier, IRFB3607GPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB3607GPBF
• Description: MOSFET N-CH 75V 80A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3607GPBF

• Input Capacitance (ciss) @ Vds: 3070pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 56 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
Fig 9. Maximum Drain Current vs. Case Temperature
1.20
1.00
0.80
0.60
0.40
0.20
0.00
100
0.1
80
70
60
50
40
30
20
10
10
1
0
-10
0.0
25
T J = 175°C
Fig 11. Typical C
0
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
10
0.5
75
20
30
T J = 25°C
100
1.0
40
OSS
125
50
Stored Energy
1.5
V GS = 0V
60
150
70
175
2.0
80
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
100
100
95
90
85
80
75
70
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
DC
1msec
100
10
10msec
100µsec
TOP
BOTTOM 46A
125
150
I D
5.6A
11A
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175
100