BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK6E4R0-75C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E4R0-75C,127

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E4R0-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae451
C
C
C
(V)
iss
oss
rss
10
Rev. 02 — 30 August 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
I
(V)
S
GS
120
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
50
0.3
T
j
= 175 °C
BUK6E4R0-75C
100
14V
N-channel TrenchMOS FET
0.6
150
V
DS
0.9
= 60V
T
j
© NXP B.V. 2010. All rights reserved.
200
= 25 °C
003aae452
V
003aae425
Q
SD
G
(nC)
(V)
250
1.2
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