BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 11
BUK6E4R0-75C,127
Manufacturer Part Number
BUK6E4R0-75C,127
Description
MOSFET N-CH TRENCH I2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK6E4R0-75C127.pdf
(14 pages)
Specifications of BUK6E4R0-75C,127
Input Capacitance (ciss) @ Vds
15450pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
234nC @ 10V
Power - Max
306W
Mounting Type
*
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
8. Revision history
Table 7.
BUK6E4R0-75C
Product data sheet
Document ID
BUK6E4R0-75C v.2
Modifications:
BUK6E4R0-75C v.1
Revision history
Release date
20100830
20100709
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
-
-
BUK6E4R0-75C
N-channel TrenchMOS FET
Supersedes
BUK6E4R0-75C v.1
-
© NXP B.V. 2010. All rights reserved.
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