PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 6.
PSMN013-100ES_2
Objective data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 4.
SD
r
(A)
I
D
200
160
120
80
40
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
1
…continued
2
20
Conditions
V
R
I
see
I
V
S
S
DS
DS
G(ext)
= 15 A; V
= 25 A; dI
3
V
10
Figure 16
All information provided in this document is subject to legal disclaimers.
= 50 V; R
= 50 V
GS
003a a d577
V
= 4.7 Ω; T
DS
(V) = 4
(V)
5.5
4.5
6
5
Rev. 02 — 19 February 2010
GS
S
4
/dt = 100 A/µs; V
L
= 0 V; T
= 2 Ω; V
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
j
= 25 °C
j
GS
= 25 °C;
Fig 5.
= 10 V;
GS
(pF)
5000
4000
3000
2000
1000
C
= 0 V;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
2
PSMN013-100ES
4
Min
-
-
-
-
-
-
-
6
Typ
20.7
24
0.8
52
109
25
52.5
© NXP B.V. 2010. All rights reserved.
8
003a a d580
V
Max
-
-
-
-
1.2
-
-
GS
C
C
rs s
is s
(V)
10
ns
nC
Unit
ns
ns
ns
V
ns
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