PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 13

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
10. Contact information
For more information, please visit:
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PSMN013-100ES_2
Objective data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
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customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
Trademarks
PSMN013-100ES
© NXP B.V. 2010. All rights reserved.
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