PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Revision history
Table 7.
PSMN013-100ES_2
Objective data sheet
Document ID
PSMN013-100ES_2
Modifications:
PSMN013-100ES_1
Revision history
20100219
20090917
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Objective data sheet
Objective data sheet
Rev. 02 — 19 February 2010
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Change notice
-
-
PSMN013-100ES
Supersedes
PSMN013-100ES_1
-
© NXP B.V. 2010. All rights reserved.
11 of 14