BUK662R7-55C,118 NXP Semiconductors, BUK662R7-55C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK662R7-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R7-55C,118

• Input Capacitance (ciss) @ Vds: 15300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK662R7-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(A)
(mΩ)
I
DSon
D
10
10
10
10
10
10
16
12
-1
-2
-3
-4
-5
-6
8
4
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
20
3.4
1
min
40
2
typ
3.6
60
max
V
3
GS
80
All information provided in this document is subject to legal disclaimers.
003aad806
V
003aae203
(V) = 4
GS
I
D
(V)
(A)
10
3.8
5
Rev. 01 — 7 September 2010
100
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK662R7-55C
max @1mA
min @2.5mA
typ @1mA
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad803
T
j
j
(°C)
(°C)
180
180
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