BUK662R7-55C,118 NXP Semiconductors, BUK662R7-55C,118 Datasheet - Page 6

• Manufacturer Part Number: BUK662R7-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R7-55C,118

• Input Capacitance (ciss) @ Vds: 15300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
6. Characteristics
Table 6.
BUK662R7-55C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
I
see
I
see
V
T
V
R
from upper edge of drain mounting base
to centre of die ; T
from source lead to source bond pad ;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 2.5 mA; V
= 25 A; V
= 25 A; V
Figure
Figure 10
Figure 10
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 45 V; R
= 5 V; I
= 10 V; I
= 4.5 V; I
= 10 V; I
= 0 V; V
Rev. 01 — 7 September 2010
= 10 Ω
9; see
12; see
13; see
13; see
D
DS
DS
DS
DS
GS
GS
DS
D
D
= 25 A; T
D
GS
GS
L
DS
GS
GS
= 25 A; T
= 25 A; T
= 44 V; V
= 44 V; V
= V
= V
= 25 A; T
Figure 15
= 1.8 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
Figure 10
j
GS
GS
= 25 °C
Figure 11
Figure 14
Figure 14
GS
; T
; T
j
; T
= 25 °C;
j
j
j
j
GS
GS
j
j
j
j
= 25 °C;
= -55 °C;
= 25 °C;
= 175 °C;
j
j
j
= 25 °C;
GS
= 175 °C
= 25 °C
= 25 °C
j
= 25 °C
= -55 °C
= 25 °C
= 175 °C;
= 5 V;
= 10 V;
N-channel TrenchMOS intermediate level FET
= 10 V;
BUK662R7-55C
Min
55
50
1.8
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2.3
-
-
-
0.02
2
2
2.9
2.3
3.2
-
146
258
35
75
11430 15300 pF
1100
772
61
101
450
186
3.5
7.5
© NXP B.V. 2010. All rights reserved.
1320
-
Max
-
-
2.8
3.3
-
500
1
100
100
3.8
2.7
4.4
6
-
-
-
-
1060
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
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