BUK654R0-75C,127 NXP Semiconductors, BUK654R0-75C,127 Datasheet - Page 10
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK654R0-75C,127
Manufacturer Part Number
BUK654R0-75C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK654R0-75C127.pdf
(14 pages)
Specifications of BUK654R0-75C,127
Input Capacitance (ciss) @ Vds
15450pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
234nC @ 10V
Power - Max
306W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT78A (TO-220AB)
BUK654R0-75C
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78A
4.5
4.1
A
1.39
1.27
A 1
0.9
0.6
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
All information provided in this document is subject to legal disclaimers.
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
Rev. 03 — 7 September 2010
2
e
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
BUK654R0-75C
PROJECTION
3.8
3.6
c
EUROPEAN
p
N-channel TrenchMOS FET
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
03-01-22
05-03-14
SOT78A
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