BUK654R0-75C,127 NXP Semiconductors, BUK654R0-75C,127 Datasheet
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK654R0-75C,127
Specifications of BUK654R0-75C,127
Related parts for BUK654R0-75C,127
BUK654R0-75C,127 Summary of contents
Page 1
... BUK654R0-75C N-channel TrenchMOS FET Rev. 03 — 7 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
Page 2
... see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 Typ ...
Page 3
... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 670 - ...
Page 4
... Product data sheet 003aae374 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK654R0-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae375 t p δ ...
Page 6
... Ω R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Min Typ Max Unit 1.8 2.3 2.8 ...
Page 7
... V (V) DS Fig 6. 003aae383 250 g fs (S) 200 150 100 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Min Typ - 0 218 175 ° < DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
Page 8
... Fig 10. Gate-source threshold voltage as a function of 003aae381 3.8 4.0 4.5 5 120 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature ...
Page 9
... Fig 14. Gate-source voltage as a function of gate 003aae451 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET (V) 8 14V 100 150 charge; typical values ...
Page 10
... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK654R0-75C v.3 20100907 • Modifications: Various changes to content. BUK654R0-75C v.2 20100902 BUK654R0-75C Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
Page 12
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 September 2010 BUK654R0-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 September 2010 Document identifier: BUK654R0-75C ...