BUK6E3R4-40C,127 NXP Semiconductors, BUK6E3R4-40C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK6E3R4-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E3R4-40C,127

• Input Capacitance (ciss) @ Vds: 8020pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Power - Max: 204W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6E3R4-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
150
120
fs
D
100
90
60
30
80
60
40
20
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
T j = 175 °C
20
2
…continued
40
T j = 25 °C
4
60
V
Conditions
I
see
I
V
GS
All information provided in this document is subject to legal disclaimers.
S
S
003aae333
DS
003aae331
I
= 25 A; V
= 20 A; dI
D
(V)
(A)
Figure 16
= 25 V
80
Rev. 3 — 14 October 2010
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
D
250
200
150
100
N-channel TrenchMOS intermediate level FET
12
10
50
8
6
4
2
0
0
of gate-source voltage; typical values
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
Output characteristics: drain current as a
GS
0
0
V
= 0 V;
GS
(V) = 10
0.5
5
BUK6E3R4-40C
6.0
Min
-
-
-
1
5.0
10
Typ
0.8
48
82
1.5
V
© NXP B.V. 2010. All rights reserved.
GS
003aae334
003aad002
V
(V)
DS
Max
1.2
-
-
(V)
4.5
4.0
3.8
3.6
3.4
3.2
15
2
Unit
V
ns
nC
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