BUK6E3R4-40C,127 NXP Semiconductors, BUK6E3R4-40C,127 Datasheet - Page 4

• Manufacturer Part Number: BUK6E3R4-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E3R4-40C,127

• Input Capacitance (ciss) @ Vds: 8020pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Power - Max: 204W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E3R4-40C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
10
D
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
V
(1) Capped at 100 A due to package.
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
GS
= 25 °C; I
≥ 10 V
50
(1)
DM
is a single pulse
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aad044
mb
1
DS
(°C)
/ I
D
200
Rev. 3 — 14 October 2010
Fig 2.
P
DC
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK6E3R4-40C
100
V
DS
(V)
150
100 μ s
1 ms
10 ms
100 ms
t
© NXP B.V. 2010. All rights reserved.
p
T
=10 μ s
003aae329
mb
03na19
(°C)
10
200
2
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