BUK655R0-75C,127 NXP Semiconductors, BUK655R0-75C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK655R0-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK655R0-75C,127

• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK655R0-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
I
R
(mΩ)
D
10
10
10
10
10
10
DSon
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
3.8
50
1
4.0
100
min
2
typ
150
V
max
GS
(V) =
3
200
All information provided in this document is subject to legal disclaimers.
003aae757
4.5
003aad806
V
GS
I
D
(A)
(V)
10.0
5.0
6.0
Rev. 02 — 14 October 2010
250
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK655R0-75C
max @1mA
min @2.5mA
typ @1mA
N-channel TrenchMOS FET
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad804
T
j
j
(°C)
(°C)
180
180
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